LithoTalk

[kanan]

Hello,
I am carrying out the positive photolithography to achieve the 2um feature size and facing the problem of dark erosion. Also there is no repeatability in the process. I am using the ABM mask aligner and the exposure is carried out at I line for 30sec when the intensity is 12.5mW/cm^2. The other parameters are as under.

Substrate: silicon
Cleaning is carried out by using the acetone and IPA and the dry with N2

1. AZ P4330 Photoresist (2 um thick)
2. Soft bake at 115 0C for 90 sec
3. Exposure dose 375mW/cm^2
4. Soft contact at -10” Hg vacuum
5. Post exposure bake at 115 0C for 90sec
6. Development time 40 sec in AZ 400k (1:3)
Does any one can help me?, I am carrying out this work for my PhD.
_________________
kanan ali
sarajevo
bosnia
Email: kananali72@yahoo.com